教員情報 - 田所　貴志 | 東京電機大学

タドコロ　タカシ TADOKORO Takashi
田所　貴志

所属東京電機大学工学部電子システム工学科

東京電機大学大学院先端科学技術研究科電気電子システム工学専攻

東京電機大学大学院工学研究科電気電子工学専攻

職種教授

著書・論文歴
1.	論文	パターニング静電塗布を用いたフレキシブル有機トランジスタの作製電気学会論文誌A 144,287-292頁 (共著) 2024/07/01
2.	論文	Direct electrospray patterning deposition for flexible organic devices Japanese Journal of Applied Physics 61,SD1004-1-SD1004-5頁 (共著) 2022/03/24
3.	論文	垂直静電塗布法を用いた有機半導体薄膜の均質化電気学会論文誌A 140 (4),179-185頁 (共著) 2020/04
4.	論文	Drug-release controlling nanoparticles with field-dependent spin-correlated radical pair system Journal of Magnetism and Magnetic Materials 502,166558(1)-166558(5)頁 (共著) 2020/02
5.	論文	Application of spin-correlated radical pair system to liposomal drug-delivery system under exposure to magnetic fields Journal of Magnetism and Magnetic Materials 479,161-165頁 (共著) 2019/01
6.	論文	50-Gb/s Direct Modulation of a 1.3-um InGaAlAs Based DFB Laser With a Ridge Waveguide Structure 19 (4) (共著) 2013/07
7.	論文	High-speed directly modulated laser for applications beyond 100GbE (共著) 2013/05
8.	論文	High-speed operation at 50 Gb/s and 60-km SMF transmission with 1.3-um InGaAlAs-based DML (共著) 2012/10
9.	論文	Ultra-high-speed electroabsorption modulator integrated lasers for 100GbE and beyond (共著) 2012/07
10.	論文	43 Gb/s 1.3-um DFB laser for40 km transmission 30 (15),2520-2524 (共著) 2012/06
11.	論文	Demonstration of high temperature operation in 1.3-um-range metamorphic InGaAs laser (共著) 2012/05
12.	論文	40-Gb/s Operation of a 1.3-/1.55-um InGaAlAs Electroabsorption Modulator Integrated With DFB Laser in Compact TO-CAN Package 17 (5),1183-1190 (共著) 2011/10
13.	論文	Large-Output-Power, Ultralow-Driving-Voltage (0.5 Vpp) Operation of 1.3-um, 4 x 25G, EADFB Laser Array for Driverless 100GbE Transmitter (共著) 2011/09
14.	論文	Long-Reach 100 Gbit Ethernet Light Source Based on 4 x 25-Gbit/s 1.3-um InGaAlAs EADFB Lasers (7),1167-1172 (共著) 2011/07
15.	論文	1.3-um, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications 47 (12),708-710 (共著) 2011/06
16.	論文	1.3-um, 50-Gbit/s EADFB Lasers for 400GbE (共著) 2011/03
17.	論文	40-Gbps Direct Modulation of 1.3-um InGaAlAs DFB Laser in Compact TO-CAN Package (共著) 2011/03
18.	論文	High-Speed Modulation Lasers for 100GbE Applications (共著) 2011/03
19.	論文	Theoretical and Experimental Investigation of the Incident-Power-Dependent Extinction Ratio of an Electroabsorption Modulator Integrated With a Distributed Feedback Laser 47 (1),60-65 (共著) 2011/01
20.	論文	Large bandwidth TO-CAN module with LCP based transmission line as serial 40 Gb/s 1.3/1.55-um light source (共著) 2010/09
21.	論文	4x25-Gbit/s, 40-km SMF transmission based on 1.3-um electroabsorption modulators integrated with DFB lasers for 100-Gbit/s Ethernet (共著) 2010/07
22.	論文	Wide temperature range operation of 10-/40-Gbps 1.55-um electroabsorption modulator integrated DFB laser (共著) 2010/07
23.	論文	Incident-power-dependent extinction ratio of electroabsorption modulator integrated with distributed feedback lasers: Theory and experiment (共著) 2010/05
24.	論文	Design and Fabrication of 10-/40-Gb/s, Uncooled Electroabsorption Modulator Integrated DFB Laser With Butt-Joint Structure 28 (1),164-171 (共著) 2010/01
25.	論文	10-Gbps Direct Modulation up to 100 C Using 1.3-um-Range Metamorphically Grown Strain Compensated InGaAs-GaAs MQW Laser on GaAs Substrate 21 (18),1344-1346 (共著) 2009/09
26.	論文	First 40-km SMF transmission for 100-Gbit/s Ethernet system based on 25-Gbit/s 1.3-um electroabsorption modulator integrated with a DFB laser module (共著) 2009/09
27.	論文	Wide Temperature Range Operation of a 1.55-um 40-Gb/s Electroabsorption Modulator Integrated DFB Laser for Very Short-Reach Applications 21 (18),1317-1319 (共著) 2009/09
28.	論文	25 Gbit/s 1.3 um InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km)100 Gbit/s ethernet system 45 (17),900-902 (共著) 2009/08
29.	論文	Operation of a 25-Gb/s Direct Modulation Ridge Waveguide MQW-DFB Laser up to 85 C 21 (16),1154-1156 (共著) 2009/08
30.	論文	High-Temperature Operation of 1.26-um Ridge Waveguide Laser With InGaAs Metamorphic Buffer on GaAs Substrate 15 (3),724-730 (共著) 2009/06
31.	論文	Uncooled (25-85 C) 10 Gbit/s operation of 1.3 um-range metamorphic Fabry-Perot laser on GaAs substrat (共著) 2009/05
32.	論文	Operation of a 25-Gbps direct modulation ridge waveguide MQW-DFB Laser up to 85 C (共著) 2009/03
33.	論文	Uncooled (25-85 C) 10-Gbps operation of 1.3-um-range metamorphic InGaAs laser on GaAs substrate 45 (7),359-360 (共著) 2009/03
34.	論文	A 1.31 um ridge waveguide laser for 10 Gbps direct modulation on an InGaAs ternary substrate (共著) 2008/05
35.	論文	Highly Reliable 1.5-um DFB Laser With High-Mesa SIBH Structure 54 (3),456-461 (共著) 2007/03
36.	論文	Highly reliable (<1000 FITs at 95C) 1.5-um DFB laser high-mesa SIBH structure for CWDM systems (共著) 2006/03
37.	論文	Low-cost 10-Gb/s optical receiver module using a novel plastic package and a passive alignment technique 23 (12),4257-4264 (共著) 2005/12
38.	論文	10 Gbit/s optical receiver module using plastic package 38 (10),470-472 (共著) 2002/05
39.	論文	Performance and reliability of a 10-Gbit/s optical receiver module using a novel plastic package (共著) 2002/05
40.	論文	Wavelength Tunable 4 ch x 2.5 Gb/s SS-DFB Laser Module for DWDM Applications (共著) 2000/09
41.	論文	Direct time-domain optical demultiplexing of 10-Gb/s NRZ signals using side-injection light-controlled bistable laser diode 10 (10),1484-1486 (共著) 1998/10
42.	論文	Micro-buried structure for electrical isolation formed by hydride vapor phase epitaxy 34 (8),816-817 (共著) 1998/04
43.	論文	Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers 36 (8),5365-5370 (共著) 1997/08
44.	論文	Error-free 2.5 Gbit/s operation of a semi-insulating buried heterostructure side-injection light-controlled bistable laser diode 70 (22),2946-2948 (共著) 1997/06
45.	論文	MOVPE growth of InGaAsP/InP-based vertical cavity structures for wafer-fused VCSELs (共著) 1997/05
46.	論文	Semi-insulating buried heterostructure side-injection light-controlled bistable laser diode (共著) 1996/10
47.	論文	1.55 um vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/lnP-GaAs/AlAs DBRs 32 (16),1483-1483 (共著) 1996/08
48.	論文	Laterally oxidized InAlAs-oxide/InP distributed Bragg reflectors 32 (18),1671-1673 (共著) 1996/08
49.	論文	Low-threshold current low-voltage vertical-cavity surface-emitting lasers with low-Al-content p-type mirrors grown by MOCVD 4 (12),1325-1327 (共著) 1992/12
50.	論文	Room-temperature pulsed operation of a 1.5-um GaInAsP/InP vertical cavity surface emitting laser 39 (11),2651-2652 (共著) 1992/11
51.	論文	Room Temperature Pulsed Operation of a 1.5-um GaInAsP/InP Vertical Cavity Surface Emitting Laser (共著) 1992/07
52.	論文	Room Temperature Pulsed Operation of a 1.5-um GaInAsP/InP vertical-cavity surface-emitting laser (共著) 1992/06
53.	論文	Room temperature pulsed operation of 1.5 um GaInAsP/InP vertical-cavity surface-emitting laser 4 (5),409-411 (共著) 1992/01
54.	論文	Comparison of Luminescence from InP Processed by Reactive Ion Beam Etching 29,242-243 (共著) 1990/02
55.	論文	Classification of etching mechanism in reactive ion beam etch 7 (5),1111-1114 (共著) 1989/10
56.	論文	リアクティブイオンビームエッチングにおけるエッチング機構の分類電子情報通信学会論文誌 J71-C (No. 6, pp 841-845) (共著) 1988/06
57.	論文	A Study on Etching Parameters of a Reactive Ion Beam Etch for GaAs and InP 27,389 (共著) 1988/03