| 言語種別 | 英語 |
|---|---|
| 発行・発表の年月 | 2022/09 |
| 形態種別 | 会議論文 |
| 査読 | 査読あり |
| 標題 | Introduction of deep impurity levels of S and Zn and high temperature single-electron transport in Si tunnel FETs |
| 執筆形態 | 共著 |
| 掲載誌名 | Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials |
| 掲載区分 | 国外 |
| 著者・共著者 | Yoshisuke Ban, Kimihiko Kato, Shota Iizuka, Shigenori Murakami, Satoshi Moriyama, Koji Ishibashi, Takahiro Mori, and Keiji Ono |